substrate bias造句
例句與造句
- Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
襯底偏壓對四面體非晶碳膜結(jié)構(gòu)和性能的影響 - Moreover , high quality nanocrystalline p - sic film was attained with the integration of the pre - carbonization process and the substrate bias effect
進一步結(jié)合襯底預碳化以及對襯底的偏壓作用，得到了高質(zhì)量的納米? sic薄膜。 - In this paper , the nucleation process of diamond by filament cvd was analyzed , and enhanced flux of ions by negative substrate bias was investigated in theory
摘要木文對熱燈絲cvd沉積金剛石膜的核化過程進行了分析，從理論上研究了負襯底偏壓增強活性離子的流量。 - The main process parameters include hydrogen content in the gas sources , hydrogen plasma catalyst pretreatment , substrate bias , deposition temperature and plasma flow guiding
主要之制程參數(shù)包括氣源中之氫氣含量、氫電漿前處理、基材偏壓、沉積溫度以及電漿導流板之施加。 - In the paper , the effect of ion bombarding on nucleation of diamond by negative substrate bias - enhanced was investigated in theory , and some experimental phenomena were explained
摘要從理論上研究了負襯底偏壓增強離子轟擊對金剛石核化的影響，并用理論解釋了一些實驗現(xiàn)象。 - It's difficult to find substrate bias in a sentence. 用substrate bias造句挺難的
- The influence of various factors , such as substrate bias voltage and temperature , working gas pressure , types of si wafer , etc . on the preparation of cbn has been studied systematically
系統(tǒng)地研究了襯底偏壓、襯底溫度、工作氣壓、 si晶片的類型等多種因素對制備cbn薄膜的影響。 - Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor
采用分步偏壓輔助射頻( rf )濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡( sem )觀察表明膜致密、均勻、與基體結(jié)合牢固。 - It also shows that hardness increases with the increase of film thickness , substrate temperature and substrate bias . and among these processing parameters , the substrate temperature and bias have the more prominent influences
同時，隨著膜厚的增加，基片溫度的提高以及對基片施加的偏壓的增高，薄膜的硬度都有不同程度的提高。 - The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique . meanwhile , the adoption of substrate bias assisted deposition further eliminated the impurity o in the film
首次解決了采用pecvd法低溫制備? sic薄膜中的含氫問題；同時，采用偏壓輔助的技術(shù)，進一步解決了薄膜中的含氧問題。 - 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。 - Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ) , assisted with substrate negative bias . in this paper , we primarily studied the effect of laser energy density , radio frequency power , substrate bias and depositing time on the growth of c - bn films , and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文采用偏壓輔助射頻等離子體增強脈沖激光沉積( rf - pepld )方法在常溫下( 25 )制備立方氮化硼( c - bn )薄膜，初步研究了薄膜沉積參數(shù)：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，并分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。 - Base on two - stage approach , we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films . the study proves that it is favorable to prepare bn thin films of high cubic phase content . depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively
根據(jù)si片上bn薄膜的反射光譜r ( )和熔融石英片上bn薄膜的反射光譜r ( )和透射光譜t ( )各自獨立的計算了bn薄膜的光學帶隙,利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ,其結(jié)果均和由經(jīng)驗公式計算得到的結(jié)果非常接近。 - Simox soi wafers produced by ion implant processes were used in this experiment . the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures . the soi transistors have been the key devices for achieving the low voltage operation and low power consumption , because of the small junction capacitance , the small s - factor , and the small substrate bias effect
這三種模型分別是：第一，將傳統(tǒng)的mos電容結(jié)構(gòu)應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數(shù)；第二種，針對soi材料的特殊結(jié)構(gòu)，為了適應生產(chǎn)線上對無損soi園片進行電學性能測試的要求，應用mosos結(jié)構(gòu)來對soi材料進行電學性能表征。 - ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer . ( 5 ) by using the microhardness tester , we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate , film thickness , substrate temperature and substrate bias
( 5 )用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數(shù)下的相應硬度。 - The roles that the hydrogen and the substrate negative bias play in the low temperature deposition of p - sic film were further well investigated . it was found that proper hydrogen concentration in gas flows and the corresponding substrate bias are the prerequisite for low temperature synthesis of p - sic film
北京工業(yè)大學工學博士學位論文一對氫氣和襯底負偏壓在b七薄膜低溫沉積中的作用進行了研究，發(fā)現(xiàn)合適比例的氫氣及相應的襯底負偏壓，是低溫制備上七c薄膜必須的條件。